A method to relate the presence of structural defects and impurities and their impact on the electrical activity in silicon for photovoltaic applications
Résumé
Relation between sub-grain boundaries characterised by Electron Backscatter Diffraction, interstitial oxygen concentration maps (coloured maps) obtained by Micro Fourier Transform Infrared spectrometry and photoluminescence map (black & white map) of the same region to characterise the electrical activity.
-A method that relates structural defects, impurity concentration and electrical activity at different scales is proposed. -Sub-grain boundaries and twin boundaries are characterised.
-Oxygen in precipitate form is associated to structural defects. Carbon and copper impurities are also related to the highest defective regions. -The degradation of electrical properties at several scales is directly related to the presence of sub-grain boundaries, grain boundaries and impurities.