Article Dans Une Revue Solar Energy Materials and Solar Cells Année : 2025

A method to relate the presence of structural defects and impurities and their impact on the electrical activity in silicon for photovoltaic applications

Résumé

Relation between sub-grain boundaries characterised by Electron Backscatter Diffraction, interstitial oxygen concentration maps (coloured maps) obtained by Micro Fourier Transform Infrared spectrometry and photoluminescence map (black & white map) of the same region to characterise the electrical activity.

Highlights:

-A method that relates structural defects, impurity concentration and electrical activity at different scales is proposed. -Sub-grain boundaries and twin boundaries are characterised.

-Oxygen in precipitate form is associated to structural defects. Carbon and copper impurities are also related to the highest defective regions. -The degradation of electrical properties at several scales is directly related to the presence of sub-grain boundaries, grain boundaries and impurities.

Fichier sous embargo
Fichier sous embargo
0 8 13
Année Mois Jours
Avant la publication
mercredi 1 octobre 2025
Fichier sous embargo
mercredi 1 octobre 2025
Connectez-vous pour demander l'accès au fichier

Dates et versions

hal-04882845 , version 1 (13-01-2025)

Licence

Identifiants

Citer

Sirine Houam, Hadjer Ouaddah, Gabrielle Regula, Isabelle Périchaud, Guillaume Reinhart, et al.. A method to relate the presence of structural defects and impurities and their impact on the electrical activity in silicon for photovoltaic applications. Solar Energy Materials and Solar Cells, 2025, 282, pp.113415. ⟨10.1016/j.solmat.2025.113415⟩. ⟨hal-04882845⟩
0 Consultations
0 Téléchargements

Altmetric

Partager

More