Electrical and ion beam analyses of Yttrium and Yttrium-Titanium getter thin films oxidation
Résumé
Yttrium, Titanium and Yttrium-Titanium getter thin films were elaborated on silicon by co-evaporation in ultra-high vacuum. Y-Ti films exhibit nanometric crystallites size (18-35 nm) leading to a very high grain boundary density, which is a favorable microstructure for an activation at low temperature. The yttrium content in Y-Ti alloys influences grain size, resistance against room temperature oxidation and gettering performance for oxygen. Y-Ti films with an yttrium content higher than 30 % show strong oxygen sorption during annealing at low temperature (< 300 °C). After 1 h of annealing at 250 °C, it was estimated that the yttrium-based getter films can trap between 0.2 and 0.5 µmol of oxygen per cm 2 , while no oxygen sorption was detected for a single metal titanium film. This make Y-Ti getter alloys attractive candidates for the packaging of MEMS under vacuum with a low bonding temperature.
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